Overview
The HXNM42007-F1 is a high-power amplifier chip based on GaN HEMT transistors, fabricated using GaN power MMIC
technology. It operates in the 6GHz–18GHz frequency range, with a power gain greater than 18dB, a typical saturated output
power of 20W, and a typical power-added efficiency of 30%. It can operate in both Pulse and CW modes, with a typical
operating voltage of Vd = +28V and Vg = -1.6V. This chip is primarily used in microwave transceiver components and highpower solid-state transmitters.
