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Overview

HX0465F2 is a 65W GaN RF power amplifier transistor with high efficiency and high gain for application frequency up to 4GHz. It is available in a flanged packages and operates in 28V or 48V supply mode.

Parameters

* Max Saturated Power: 69W@3GHz
* Optimal Drain Efficiency: 71% @3GHz

Application

* RF/Microwave Systems