HXNM41001

    The HXNM41001 is a high-performance GaN power amplifier chip operating in the 13–15.5 GHz range, fabricated using a 0.2 µm GaN HEMT MMIC process. It delivers high output power and efficiency and requires a dual-supply voltage configuration. External peripheral capacitors are necessary for operation. The chip utilizes backside metallization with vias for grounding, and the chip surface is passivated with silicon nitride, except for the bonding pads. Every unit undergoes 100% RF testing and standard visual inspection.