Overview
The HXNM45002 chip is a high-performance 12-14.5GHz high-power amplifier manufactured using gallium nitride high electron mobility transistor technology. The chip is grounded via a through-hole on the back metal. All chips undergo 100% RF testing. This chip operates on dual power supplies with a drain voltage of Vds=28V and provides 48.5dBm of output power within the 12-14.5GHz range.
