Overview
The HXNM45001 chip is a high-performance 10-14 GHz high-power amplifier manufactured using gallium nitride high electron mobility transistor technology. The chip is grounded via a through-hole on the back metal. All chips undergo 100% RF testing. This chip operates with dual power supplies, has a drain voltage Vds=28V, and provides 47.5dBm of output power within the 10-14 GHz range.
