Overview
The HXNM44011 is a high-efficiency, high-linearity, high-power amplifier chip implemented using a 0.25μm GaN HEMT process. It operates over a frequency range of 12.0GHz to 15.0GHz, with a power gain of 22dB, a typical saturated output power of 47dBm, and a typical power-added efficiency of 34%. It can operate in pulse mode. The chip is grounded via a rear via and operates with dual power supplies, with a typical operating voltage of Vd=28V. This chip is primarily used in satellite communications.
