Overview
The HXNM44010 is a power amplifier chip fabricated using a 0.25μm GaN HEMT process. It operates in the frequency range of 8.5GHz to 10.5GHz, with a power gain greater than 24dB, a typical saturated output power of 52dBm, and a typical power-added efficiency of 45%. It operates only in pulse mode. The chip is grounded via a rear via, and its typical operating voltages are Vd = +48V and Vg = -2.6V.
