Overview
The HXNM44008 is a power amplifier chip fabricated using a 0.25μm GaN HEMT process. It operates in the 7.5GHz to 10.5GHz frequency range, has a power gain greater than 25dB, a typical saturated output power of 49dBm, a typical power-added efficiency of 40%, and can operate in pulse mode. The chip is grounded via a rear via, and its typical operating voltages are Vd = +28V and Vg = -2.6V.
