Overview
The HXNM44007 is a high-performance GaN power amplifier chip with a frequency range of 7~13GHz, usable in both continuous wave and pulse modes. In pulse mode, at VD=+28V, it typically exhibits a small-signal gain of 34dB, a typical saturated output power of 46dBm, and a typical saturated power-added efficiency of 40%. The chip utilizes on-chip through-hole metallization technology, ensuring good grounding and eliminating the need for additional grounding measures, making it simple and convenient to use. The back of the chip is metallized, making it suitable for eutectic bonding processes.
