The HXNM44004 is a high-performance GaN power amplifier chip with a frequency range of 4.5~6.5GHz, operating in both pulse and continuous wave modes. In pulse mode, it typically exhibits a small-signal gain of 36dB, a saturated output power of 49dBm, and a power-added efficiency of 51%.
This chip utilizes on-chip through-hole metallization technology, ensuring good grounding and eliminating the need for additional grounding measures, making it simple and convenient to use. The back of the chip is metallized, suitable for eutectic bonding or conductive adhesive bonding processes.
Parameters
*Frequency Range：4.5-6.5GHz *Small Signal Gain (Pulse)：36dB *Output Psat (Pulse)：49dBm *PAE (Pulse)：51% *Input Return Loss：20dB *Power Gain：26.5dB *Quiescent Operating Current (Pulse)：1.8A@+28V *Chip Dimensions：3.70mm×5.80mm×0.075mm
