Overview
The HXNM44003 is a high-efficiency, high-linearity, high-power amplifier chip based on a 0.25μm GaN HEMT process. It operates over a frequency range of 4GHz to 10GHz, with a power gain of 17dB, a typical saturated output power of 45dBm, a typical power-added efficiency of 30%, and operates in pulse mode.
The chip is grounded via a rear via, operates with dual power supplies, and has a typical operating voltage of Vd=28V.
