Overview
The HXNM44001 is a high-performance GaN power amplifier chip with a frequency range of 0.2~7GHz, usable in both continuous wave and pulse modes. In continuous wave mode, with VD = +28V, it delivers a typical small-signal gain of 28dB, a typical saturated output power of 40.5dBm, and a typical power-added efficiency of 33%.
This chip utilizes on-chip through-hole metallization technology, ensuring good grounding and eliminating the need for additional grounding measures, making it simple and convenient to use. The back of the chip is metallized, making it suitable for eutectic bonding processes.
