Overview
The HXNM42004 is a high-power amplifier chip based on GaN HEMT transistors, fabricated using GaN power MMIC technology. It operates over a frequency range of 8GHz to 12GHz, with a power gain of 21dB, a typical saturated output power of 150W, and a typical power-added efficiency of 40%. It can operate in pulse mode. The chip is grounded via a rear via, operates with dual power supplies, and has typical operating voltages of Vd=+48V and Vg=-2.0V.
