Overview
The HXNM42022-F is a high-power amplifier chip based on GaN HEMT transistors, fabricated using GaN power MMIC technology. It operates in the frequency range of 2GHz to 18GHz, with a power gain greater than 22dB, a saturated output power of 41dBm, and a typical power-added efficiency of 20%. It can operate in continuous wave mode. The chip(Bare Die) uses backside through-hole grounding and operates with dual power supplies, with typical operating voltages of Vd=+28V and Vg=-2.0V. This chip is primarily used in microwave transceiver modules and high-power solid-state transmitters.
