Overview
The HXNM42007-F1 is a high-power amplifier chip based on GaN HEMT transistors, manufactured using GaN power MMIC technology. The operating frequency range covers 6GHz to 18GHz, with a power gain greater than 18dB, typical saturated output power of 20W, and a typical power-added efficiency of 30%. It can operate in pulse continuous wave mode. The typical operating voltages are Vd = 28V and Vg = -1.6V. This chip is mainly used in microwave transceiver modules, high-power solid-state transmitters, and similar applications.
